Preparation and properties of Er and Yb doped InP-based semiconductor compounds

Abstract

In this paper we pursue the effect of the erbium and ytterium addition during the liquid phase epitaxial (LPE) growth on physical properties of thin InP layers. Series of InP layer samples were prepared by LPE from the melts containing 0–0.3 wt.% of Er and Yb. The grown layers were examined by the Hall effect andC-V measurements, photoluminescence spectroscopy and Rutherford backscattering spectrometry (RBS). We have found that only Yb impurity was incorporated into the lattice of InP layer. With increasing Yb content in the growth melt the layer’s conductivity smoothly changed from n to p type when Yb admixture exceeded certain limit. On the basis of these results we prepared p-n junctions in the InP layers directly doped by Yb, and tested then byC-V measurements.