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Lpe growth method possibilities in A3B5 semiconductors preparation

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Czechoslovak Journal of Physics Aims and scope

Abstract

Pre-diffusion limited technique of liquid phase epitaxy is used for preparation of quaternary solid solution Ga x In1−x As y P1−y and binary InP. Surface morphology of the layers prepared at this condition has been compared with those prepared by conventional LPE. Quaternary strained layers with composition near to Ga0.21In0.79As0.75P0.25 were grown with perpendicular lattice mismatch up to 1.6% in compression, on the InP substrates of (100) orientation. The used epitaxial technique has been modified for perspective attempt to heal the growth interfaces. Modification was tested by InP growth.

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Authors and Affiliations

  1. Institute of Radio Engineering and Electronics, Acad. Sci. CR, Chaberská 57, 182 51, Praha 8, Czech Republic

    D. Nohavica

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  1. D. Nohavica
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Nohavica, D. Lpe growth method possibilities in A3B5 semiconductors preparation. Czech J Phys 47, 699–705 (1997). https://doi.org/10.1023/A:1021230617028

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  • DOI: https://doi.org/10.1023/A:1021230617028

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