Abstract
It is shown how the traditional method of neglecting the energy of acoustic phonons and approximating their distribution by the equipartition law leads to significant errors in the phonon growth rate in a many-valley model semiconductor when the lattice temperature is low.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Canali C., Jacoboni C., Nava F., Ottaviani G., and Alberigi-Quaranta A.: Phys. Rev. B 12 (1975) 2265.
Ghorai A.K., Bhattacharya D.P.: Phys. Rev. B 47 (1993) 13858.
Reggiani L., Canali C., Nava F., and Ottaviani G.: Phys. Rev. B 16 (1977) 2781.
Jacoboni C., Nava F., Canali C., and Ottaviani G.: Phys. Rev. B 24 (1981) 1014.
Conwell E.M.: High Field Transport in Semiconductors, Solid State Physics, Suppl. 9. Academic Press, New York, 1967.
Herring C., Vogt E.: Phys. Rev. 101 (1956) 944.
Reggiani L.: Hot-Electron Transport in Semiconductors. Springer-Verlag, Berlin 1985.
Chakrabarti N., Bhattacharya D.P.: Phys. Rev. B 53 (1996) 6885.
Rights and permissions
About this article
Cite this article
Chakrabarti, N., Bhattacharya, D.P. Phonon growth in a many valley model semiconductor at low lattice temperatures. Czechoslovak Journal of Physics 47, 1037–1041 (1997). https://doi.org/10.1023/A:1021189407942
Issue Date:
DOI: https://doi.org/10.1023/A:1021189407942