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Calculations of Radiation-Induced Defect Profiles in CdHgTe Crystals Exposed to Ion Pulses

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Abstract

The formation and evolution of the radiation-defect profiles in CdHgTe crystals exposed to high-power ion pulses is examined. A mathematical model for radiation-defect formation allowing for the effects of an inhomogeneous nonstationary temperature field and mechanical quasi-static and dynamic stress fields is discussed. Examples of calculations are given, and the calculated and experimental data are compared.

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REFERENCES

  1. A. V. Voitsekhovskii, A. P. Kokhanenko, and S. A. Shul'ga, Russ. Phys. J., 43, No. 9, 729 (2000).

    Google Scholar 

  2. S. A. Shul'ga and A. B. Voitsekhovskii, Preprint No. 12, Tomsk State Univ., Tomsk (2001).

    Google Scholar 

  3. G. A. Bleikher, V. P. Krivobokov, and O. V. Pashchenko, Heat and Mass Transfer in Solids Exposed to High-Power Charged-Particle Beams [in Russian], Nauka, Novosibirsk (1999).

    Google Scholar 

  4. B. A. Boley and J. H. Weiner, Theory of Thermal Stresses, Wiley, New York (1960).

    Google Scholar 

  5. A. V. Voitsekhovskii, E. M. Kiryushkin, and A. G. Korotaev, Materials of II All-Russia Workshop on Physics and Chemistry of Semiconductors [in Russian], Pavlodar (1989).

  6. A. V. Voitsekhovskii, E. M. Kiryushkin, and A. G. Korotaev, Materials of II All-Russia Workshop on Physics and Chemistry of Semiconductors [in Russian], Pavlodar (1989).

  7. A. V. Voitsekhovskii, Materials of II All-Russia Workshop on Physics and Chemistry of Semiconductors [in Russian], Pavlodar (1989).

  8. A. N. Georgobiani and M. K. Sheinkman (eds.), Physics of the AIIBVI Compounds [in Russian], Nauka, Moscow (1986).

    Google Scholar 

  9. A. A. Samarsky and A. P. Mikhailov, Computers and Life (Mathematical Modeling) [in Russian], Pedagogika, Moscow (1987).

    Google Scholar 

  10. N. N. Kalitkin, Numerical Methods [in Russian], Nauka, Moscow (1978).

    Google Scholar 

  11. A. A. Samarsky, Introduction to Numerical Methods [in Russsian], Nauka, Moscow (1987).

    Google Scholar 

  12. A. N. Tikhonov and A. A. Samarsky, Equations in Mathematical Physics [in Russian], Nauka, Moscow (1977).

    Google Scholar 

  13. R. D. Richtmyer and K. W. Morton, Difference Methods for Initial-Value Problems, Interscience Publishers, New York (1967).

    Google Scholar 

  14. A. V. Voitsekhovsky and A. P. Kokhanenko, Russ. Phys. J., 41, No. 1, 76 (1998).

    Google Scholar 

  15. F. A. Zaitov, F. K. Isaev, and A. V. Gorshkov, Defect Formation and Diffusion Processes in Certain Semiconductor Solid Solutions [in Russian], Azerneshr, Baku (1984).

    Google Scholar 

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Authors and Affiliations

  1. Tomsk State University, Russia

    A. V. Voitsekhovskii, A. P. Kokhanenko & S. A. Shul'ga

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  1. A. V. Voitsekhovskii
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  2. A. P. Kokhanenko
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  3. S. A. Shul'ga
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Voitsekhovskii, A.V., Kokhanenko, A.P. & Shul'ga, S.A. Calculations of Radiation-Induced Defect Profiles in CdHgTe Crystals Exposed to Ion Pulses. Russian Physics Journal 45, 629–637 (2002). https://doi.org/10.1023/A:1021163722129

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