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Semiconductor Fatigue-Damage Indicator

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Journal of Engineering Physics and Thermophysics Aims and scope

Abstract

A means of using a semiconductor film element as a fatigue-damage indicator is substantiated. Methods of manufacturing it are described.

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REFERENCES

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Authors and Affiliations

  1. Tashkent State Medical Institute, Tashkent, Uzbekistan

    M. K. Karabaev

  2. Fergana State University, Fergana, Uzbekistan

    K. É. Onarkulov, M. M. Akhmedov & D. A. Yusupova

Authors
  1. M. K. Karabaev
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  2. K. É. Onarkulov
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  3. M. M. Akhmedov
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  4. D. A. Yusupova
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Karabaev, M.K., Onarkulov, K.É., Akhmedov, M.M. et al. Semiconductor Fatigue-Damage Indicator. Journal of Engineering Physics and Thermophysics 75, 1227–1228 (2002). https://doi.org/10.1023/A:1021148515440

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  • DOI: https://doi.org/10.1023/A:1021148515440

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