Abstract
The influence of concentrations of vapor-phase growth components on the structure of singular, vicinal, and nonsingular growth surfaces of InAs epitaxial layers grown in the In–AsCl3–H2 system is investigated by the methods of electron microscopy. It is established that the average distance λ between steps in the echelon increases as the input pressure P AsCl3 increases in the range 70–700 Pa and then approaches a constant value λ when P AsCl3 > 700 Pa. The observed dependences λ(P AsCl3) are explained within the framework of the model of diffusion interaction of steps.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
REFERENCES
L. G. Lavrent'eva, V. G. Ivanov, I. V. Ivonin, and V. A. Moskovkin, Izv. Vyssh. Uchebn. Zaved., Fiz., 25, No. 9, 105-108 (1982).
L. G. Lavrent'eva, M. D. Vilisova, I. V. Ivonin, et al., Izv. Vyssh. Uchebn. Zaved., Fiz., 16, No. 2, 63-69 (1973).
I. V. Ivonin and S. E. Toropov, Izv. Vyssh. Uchebn. Zaved., Fiz., 30, No. 9, 8-12 (1987).
G. A. Aleksandrova, I. V. Ivonin, L. M. Krasil'nikova, et al., Izv. Vyssh. Uchebn. Zaved., Fiz., 26, No. 11, 49-52 (1983).
R. L. Schwoebel, J. Appl. Phys., 40, 615-618 (1969).
B. K. Vainshtein, ed., Modern crystallography. Vol. 3. Crystal Growth [in Russian], Nauka, Moscow (1980).
A. A. Chernov, M. P. Ruzaikin, and N. S. Papkov, Poverkhn. Fiz., Khim., Mekh., No. 2, 94-108 (1982).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Ivonin, I.V., Devyat'yarova, L.L., Lavrent'eva, L.G. et al. Interaction of Growth Steps on the Surface of InAs Epitaxial Layers in Vapor-Phase Epitaxy. Russian Physics Journal 45, 638–642 (2002). https://doi.org/10.1023/A:1021115906200
Issue Date:
DOI: https://doi.org/10.1023/A:1021115906200