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Study of the Surface Processes in Vapor-Phase Epitaxial GaAs: Asymmetric Trapping of Atoms at the Step

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Abstract

Experimental proofs of asymmetric trapping of atoms at the growth step in vapor-phase epitaxy of gallium arsenide in the GaAs–AsCl3–H2 system are given. The data obtained confirm the important role of the surface diffusion mass transfer in the growth of epitaxial GaAs layers on vicinals in the neighborhood of (111)A. The effective diffusion length is estimated.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University, Russia

    I. V. Ivonin, L. M. Krasil'nikova, L. G. Lavrent'eva & L. P. Porokhovnichenko

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  1. I. V. Ivonin
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  2. L. M. Krasil'nikova
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  3. L. G. Lavrent'eva
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  4. L. P. Porokhovnichenko
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Ivonin, I.V., Krasil'nikova, L.M., Lavrent'eva, L.G. et al. Study of the Surface Processes in Vapor-Phase Epitaxial GaAs: Asymmetric Trapping of Atoms at the Step. Russian Physics Journal 45, 493–497 (2002). https://doi.org/10.1023/A:1021088522941

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