Abstract
The optical spectra of glassy As2X3 (X = S, Se, Te) in the range 0–40 eV were calculated from experimental reflection and electronic energy loss spectra using Kramers–Kronig integral relations and analyzed in detail. The dielectric permittivity spectra of g-As2X3 were for the first time decomposed into elementary components and their main parameters were determined.
Similar content being viewed by others
REFERENCES
Abrikosov, N.Kh., Bankina, V.F., Poretskaya, L.V., et al., Poluprovodnikovye khal'kogenidy i splavy na ikh osnove (Semiconducting Chalcogenides and Their Alloys), Moscow: Nauka, 1975.
Mott, N. and Davis, E., Electronic Processes in NonCrystalline Materials, Oxford: Oxford Univ. Press, 1979, 2nd ed. Translated under the title Elektronnye protsessy v nekristallicheskikh veshchestvakh, Moscow: Mir, 1982.
Robertson, I., Electronic Structure of Amorphous Semiconductors, Adv. Phys., 1983, vol. 32, no. 3, pp. 361–452.
Dembovskii, S.A. and Chechetkina, E.A., Stekloobrazovanie (Glass Formation), Moscow: Nauka, 1990.
Svechnikov, S.V., Khiminets, V.V., and Dovgoshei, N.I., Slozhnye nekristallicheskie khal'kogenidy i khal'kogalogenidy i ikh primenenie v optoelektronike (Properties and Optoelectronic Applications of Mixed Noncrystalline Chalcogenides and Chalcohalides), Kiev: Naukova Dumka, 1992.
Elektronnye yavleniya v khal'kogenidnykh stekloobraznykh poluprovodnikakh (Electronic Processes in Glassy Chalcogenide Semiconductors), Tsendin, K.D., Ed., St. Petersburg: Nauka, 1996.
Sobolev, V.V. and Nemoshkalenko, V.V., Metody vychislitel'noi fiziki v teorii tverdogo tela. Elektronnaya struktura poluprovodnikov (Methods of Computational Physics in the Theory of Solids: Electronic Structure of Semiconductors), Kiev: Naukova Dumka, 1988.
Pines, D., Elementary Excitations in Solids, New York: Benjamin, 1963. Translated under the title Elementarnye vozbuzhdeniya v tverdykh telakh, Moscow: Mir, 1965.
Sobolev, V.V. and Sobolev, V.Val., The Permittivity over a Wide Energy Range of Fundamental Absorption, Neorg. Mater., 1994, vol. 30, no. 8, pp. 1098–1100 [Inorg. Mater. (Engl. Transl.), vol. vn30, no. sn8, pp. pp1016–1017].
Sobolev, V.V., Timonov, A.P., and Sobolev, V.Val., Fine Structure of the Dielectric Permittivity of Diamond, Fiz.i Tekh. Poluprovodn. (S.-Peterburg), 2000, vol. 34, no. 8, pp. 940–946.
Andriesh, A.M., Sobolev, V.V., and Popov, Yu.V., Concerning the Energy Spectrum of Crystalline and Glassy Arsenic Chalcogenides, Simpozium po khimicheskoi svyazi v poluprovodnikakh (Symp. on Chemical Bonding in Semiconductors), Minsk: Nauka i Tekhnika, 1967,p. 76.
Perrin, J., Cazaux, J., and Soukiassian, P., Optical Constants and Electronic Structure of Crystalline and Amorphous As2S3 in the 3 to 35 eV Range, Phys. Status Solidi B, 1974, vol. 62, no. 1, pp. 343–350.
Perrin, J., Contribution à l'étude des transitions interbandes et des plasmons dans les phases cristallisée et amorphe du trisulphure d'arsenic, Thèse, Reims: Univ. de Reims, 1973.
Fiziko-khimicheskie svoistva okislov: Spravochnik (Physicochemical Properties of Oxides: A Handbook), Samsonov, G.V., Ed., Moscow: Metallurgiya, 1978.
Lazarev, V.B., Sobolev, V.V., and Shaplygin, I.S., Khimicheskie i fizicheskie svoistva oksidov metallov (Chemical and Physical Properties of Metal Oxides), Moscow: Nauka, 1983.
Bishop, S.G. and Shevchik, N.J., Densities of Valence States of Amorphous and Crystalline As2S3, As2Se3, and As2Te3, Phys. Rev. B: Solid State, 1975, vol. 12, no. 4, pp. 1567–1578.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Sobolev, V.V., Sobolev, V.V. Optical Spectra of Glassy Arsenic Chalcogenides. Inorganic Materials 38, 1189–1193 (2002). https://doi.org/10.1023/A:1020939221413
Issue Date:
DOI: https://doi.org/10.1023/A:1020939221413