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Full Band Monte Carlo Simulation of Wurtzite AlGaN/GaN MODFETs

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Abstract

We present full band Monte Carlo simulations of a wurtzite Al0.15Ga0.85N/GaN modulation-doped field-effect transistor (MODFET). We found that without inclusion of the piezoelectric effect, the electron concentrations in the channel are much lower than obtained from experimental data. The calculated I ds-V ds curves show a strong negative differential resistance, which is a feature observed in experimental devices. Self-heating effects are usually believed to be the main cause of the negative differential resistance. Our simulations do not include self-heating, and this would indicate that at least part of what is observed is also caused by the drift-velocity behavior vs. electric field of the narrow conduction channel. For a 0.2 μm gate MODFET, the simulations yield a maximum trans-conductance G m ≈ 250 mS/mm with V G = 1.0 V and V ds = 5.0 V. When V G = 0.0 V and V ds = 8.0 V, we obtain a maximum cutoff frequency f T = 180 GHz with I d = 1159 mA/mm.

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Authors and Affiliations

  1. Beckman Institute, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA

    Baozeng Guo & Umberto Ravaioli

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  1. Baozeng Guo
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  2. Umberto Ravaioli
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Correspondence to Umberto Ravaioli.

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Guo, B., Ravaioli, U. Full Band Monte Carlo Simulation of Wurtzite AlGaN/GaN MODFETs. Journal of Computational Electronics 1, 309–311 (2002). https://doi.org/10.1023/A:1020762501762

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