Skip to main content

On the Breakdown of Universal Mobility Curves: A Brownian 3D Simulation Framework


We present an efficient simulation approach to study the universal mobility behaviour in Si MOS structures with random Si/SiO2 interfaces. Our approach is based on 3D Brownian dynamics in devices with realistic Si/SiO2 interfaces reconstructed from a Gaussian or exponential correlation function. The carrier-interface roughness scattering is treated ab-initio in our simulations and it results in correct velocity and real space distributions. The method is efficient and capable of 3D simulation of the interface roughness limited mobility in small MOSFETs in a statistical manner. After a careful calibration procedure, we reproduce the effective field dependence of interface mobility for μBulk = 1100 cm2/Vs using a random interface with single atomic steps and a correlation length of 6 nm.

This is a preview of subscription content, access via your institution.


  • Arokianathan C.R., Asenov A., and Davies J.H. 1996. J. Appl. Phys. 80: 226.

    Google Scholar 

  • Asenov A. 1998. IEEE Trans. Electron Dev. 45: 2505.

    Google Scholar 

  • Asenov A., Kaya S., and Davies J.H. 2000. Superlat. & Microstr. 28: 507.

    Google Scholar 

  • Chau R. et al. 2000. IEDM Tech. Dig. 45.

  • Goodnick S. et al. 1985. Phys. Rev. B. 32: 8171.

    Google Scholar 

  • Jallepalli S. et al. 1997.IEEE Trans. Electron Dev. 44: 297.

    Google Scholar 

  • Kaya S. et al. 2001. Proc. SISPAD 78.

  • Kruithof G.H., Klapwijk T.M., and Bakker S. 1991. Phys. Rev. B 43: 6642.

    Google Scholar 

  • Pirovano A. et al. 2000. IEEE Electron Dev. Lett. 21: 34.

    Google Scholar 

  • Takagi S. et al. 1994. IEEE Trans. Electron Dev. 41: 2357.

    Google Scholar 

  • The International Technology Roadmap for Semiconductors, 1999 edition.

  • Vasileska D. and Ferry D.K. 1997. IEEE Trans. Electron Dev. 44: 577.

    Google Scholar 

  • Wordelmann C. and Ravaioli U. 2000. IEEE Trans. Electron Dev. 47: 410.

    Google Scholar 

  • Yamakawa S. et al. 1996. J. Appl. Phys. 79: 911.

    Google Scholar 

  • Yamanaka T. et al. 1996. IEEE Electron Dev. Lett. 17: 178.

    Google Scholar 

Download references

Author information

Authors and Affiliations


Rights and permissions

Reprints and Permissions

About this article

Cite this article

Kaya, S., Asenov, A. & Roy, S. On the Breakdown of Universal Mobility Curves: A Brownian 3D Simulation Framework. Journal of Computational Electronics 1, 375–379 (2002).

Download citation

  • Issue Date:

  • DOI:

  • universal mobility
  • interface roughness scattering
  • device simulation
  • Brownian dynamics