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A Multi-Carrier Model for Interface Trap Generation

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Abstract

We discuss the need for a multiple vibrational model of interface trap generation. Using first order perturbative scattering theory we derive the effect of vibrationally excited phonon modes on the electronic transition which is estimated to be responsible for interface state generation. We derive a multiple vibrational model which explains the observed change in device lifetime vs. source-drain current.

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References

  • Avouris Ph. (Ed.) 1993. Atomic and Nanometer Scale Modification of Materials: Fundamentals and Applications, Kluwer, pp. 97–109.

  • Budde M., Bech Nielsen B., Parks Cheney C., Tolk N. H., and Feldman L.C. 2000. Phys. Rev. Lett. 85: 2965.

    Google Scholar 

  • Guyot-Sionnest P., Lin P.H., and Hiller E.M. 1995. J. Chem. Phys. 102: 4269.

    Google Scholar 

  • Haggag A., McMahon W., Hess K., and Fischer B. 2000. Proceeding of Int. Workshop on Comp. Elect. p. 49.

  • Hess K., Register L.F., McMahon W., Tuttle B., Aktas O., Ravaioli U., Lyding J.W., and Kiziyalli I.C. 1999. Physica B: Condensed Matter 527–531.

  • Hu C.-M., Tam S.C., Hsu F.-C., Ko P.-K., Chan T.-Y., and Terrill K.W. 1985. IEEE Trans. Elect. Devs. 32(2): 375.

    Google Scholar 

  • Rauch III S.E., La Rosa G., and Guarin F.J. 2001. In: Proceedings of Int. Rel. Phys. Symp. p. 399.

  • Shen T.-C., Wang C., Abeln G.C., Tucker J.R., Lyding J.W., Avouris Ph., and Walkup R.E. 1995. Science 268: 1950.

    Google Scholar 

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Authors and Affiliations

  1. Beckman Institute, University of Illinois at Urbana-Champaign, Urbana, Illinois, 61801, USA;

    William McMahon & Karl Hess

  2. Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois, 61801, USA

    William McMahon

  3. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, 61801, USA

    Karl Hess

Authors
  1. William McMahon
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  2. Karl Hess
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McMahon, W., Hess, K. A Multi-Carrier Model for Interface Trap Generation. Journal of Computational Electronics 1, 395–398 (2002). https://doi.org/10.1023/A:1020716111756

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  • DOI: https://doi.org/10.1023/A:1020716111756

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