Skip to main content
SpringerLink
Log in

Benchmarking Macroscopic Transport Models for Nanotransistor TCAD

  • Published:
Journal of Computational Electronics Aims and scope Submit manuscript

Abstract

We benchmark macroscopic transport models against the ballistic limit in a realistic MOSFET structure to assess their validity in the near-ballistic regime and identify the challenges to a new macroscopic model valid from diffusive to ballistic limit. The macroscopic transport models tested in this study are drift-diffusion, Bude's drift-diffusion, and an energy transport model. We perform the benchmarking study with quasi-2D simulation on a model 10 nm ultra-thin body double-gate MOSFET. We confirm from our results that none of those macroscopic models successfully provides reliable predictions for nanotransistors operating in the near-ballistic regime and we explain the reason for the failure.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  • Banoo K., Rhew J., Lundstrom M., Jerome J., and Shu C. 2001. VLSI Design 13: 5.

    Google Scholar 

  • Baranger H. and Wilkins J. 1987. Phys. Rev. B 36: 1487.

    Google Scholar 

  • Bude J. 2000. In Intern. Conf. on Simulation of Semiconductor Processes & Devices, SISPAD2000, Seattle WA, p. 23.

  • Caughey D.M. and Thomas R.E. 1967. Proc. IEEE, p. 2192.

  • Chen D., Kan E.C., Ravaioli U., and Dutton R.W. 1992. Electron Dev. Lett. 13: 26.

    Google Scholar 

  • Cooper J.A. Jr. and Nelson D.F. 1983. J. Appl. Phys 54: 1445.

    Google Scholar 

  • Jungemann C., Neinhus B., and Meinerzhagen B. 2000. In Intern. Conf. on Simulation of Semiconductor Processes & Devices, SISPAD2000, Seattle WA, p. 42.

  • Lundstrom M.S. 1997. IEEE Electron Dev. Lett. 18: 361.

    Google Scholar 

  • Lundstrom M.S. 2000. Fundamentals of Carrier Transport. Cambridge University Press, Cambridge, UK, Chs. 5–8.

    Google Scholar 

  • Nekovee M., Geurts B., et al. 1992. Phys. Rev. B 45: 6643.

    Google Scholar 

  • Rhew J.-H., Ren Z., and Lundstrom M.S. 2002. Manuscript is available at http://ece.purdue.edu/celab. Accepted by Solid State Electronics.

  • Rim K., Hoyt J.L., and Gibbons J.F. 1998.IEDMTech. Digest, p.707.

  • Timp G., Bude J., et al. 1999. IEDM Tech. Digest 55.

Download references

Author information

Authors and Affiliations

  1. School of Electrical and Computer Engineering, Purdue University, 1285 EE Building, West Lafayette, IN, 47907, USA

    Jung-Hoon Rhew, Zhibin Ren & Mark S. Lundstrom

Authors
  1. Jung-Hoon Rhew
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Zhibin Ren
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Mark S. Lundstrom
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Rhew, JH., Ren, Z. & Lundstrom, M.S. Benchmarking Macroscopic Transport Models for Nanotransistor TCAD. Journal of Computational Electronics 1, 385–388 (2002). https://doi.org/10.1023/A:1020712010848

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1023/A:1020712010848

Search

Navigation