Abstract
When applied to partially depleted SOI MOSFETs, the energy transport model predicts anomalous output characteristics. The effect that the drain current reaches a maximum and then decreases is peculiar to the energy transport model. It is not present in drift-diffusion simulations and its occurrence in measurements is questionable. The effect is due to an overestimation of the diffusion of channel hot carriers into the floating body. A modified energy transport model is proposed which describes hot carrier diffusion more realisticly and allows for proper simulation of SOI MOSFETs.
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Kosina, H., Gritsch, M., Grasser, T. et al. An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs. Journal of Computational Electronics 1, 371–374 (2002). https://doi.org/10.1023/A:1020703709031
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DOI: https://doi.org/10.1023/A:1020703709031