Abstract
Hollow silicon carbide nanostructures with length up to 1 μm have been produced for the first time along with threadlike structures. The preparation of SiC nanostructures from silicon and carbon at 1000-1100 °C was carried out without prior gasification of these elements. The growth of SiC nanostructures involves a step featuring atomization of silicon and carbon at such low temperatures. The growth of SiC nanotubes upon the reduction of carbon by SiO2 in the initial period of the preparation proceeds with their predominant formation as bundles. Silicon carbide may correspond to the highly textured α-modification.
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Kharlamov, A.I., Kirillova, N.V. & Kaverina, S.N. Hollow Silicon Carbide Nanostructures. Theoretical and Experimental Chemistry 38, 237–241 (2002). https://doi.org/10.1023/A:1020563714820
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DOI: https://doi.org/10.1023/A:1020563714820