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Preparation of Thick LaCu1 – x Ni x O2.5 + δ Films Exhibiting a High-Temperature Metal–Semiconductor Transition

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Abstract

The conditions for producing thick LaCu1 – x Ni x O2.5 + δ films on different substrates were optimized. The effects of the heat-treatment conditions, substrate material, and the nature of the liquid organic binder on the composition, structure, and properties of the films were studied. Single-phase coatings obtained on MgO, ZrO2 , BaSO4 , and Ni substrates 50 to 200 μm in thickness were close in properties to bulk LaCu1 – x Ni x O2.5 + δ and exhibited a metal–semiconductor transition at about 500°C.

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Authors and Affiliations

  1. Institute of Solid-State Chemistry, Ural Division, Russian Academy of Sciences, Pervomaiskaya ul. 91, Yekaterinburg, 620219, Russia

    V. N. Krasil'nikov & G. V. Bazuev

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  1. V. N. Krasil'nikov
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  2. G. V. Bazuev
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Krasil'nikov, V.N., Bazuev, G.V. Preparation of Thick LaCu1 – x Ni x O2.5 + δ Films Exhibiting a High-Temperature Metal–Semiconductor Transition. Inorganic Materials 38, 1048–1052 (2002). https://doi.org/10.1023/A:1020537623770

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