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Electrical conductivity of indium sesquioxide thin film

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Abstract

This paper reports electrical properties of In2O3 thin film (100 nm) at elevated temperatures (667–1118 K) and under controlled oxygen activity. The present study, based on the measurements of electrical conductivity (EC) using the method proposed by van der Pauw, includes the following determinations: Dynamics of EC changes during gas/solid equilibration of the O2/In2O3 system; The dependence of EC on oxygen partial pressure dependence; The dependence of EC on temperature.

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Authors and Affiliations

  1. Centre for Materials Research in Energy Conversion, School of Materials Science and Engineering, The University of New South Wales, Sydney, NSW, 2052, Australia

    T. Bak, J. Nowotny, M. Rekas & C. C. Sorrell

  2. Department of Communication and Electronic Engineering, Royal Melbourne Institute of Technology, GPO Box 2476V, Melbourne, Vic, 3001, Australia

    P. A. Banda & W. Wlodarski

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  1. T. Bak
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  2. J. Nowotny
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  5. P. A. Banda
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  6. W. Wlodarski
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Bak, T., Nowotny, J., Rekas, M. et al. Electrical conductivity of indium sesquioxide thin film. Journal of Materials Science: Materials in Electronics 13, 571–579 (2002). https://doi.org/10.1023/A:1020194513449

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