Abstract
A study of the synthesized (Sb2Se3)2 (Sb2Te3)1 glassy system has been carried out, X-ray diffraction (XRD) patterns and differential thermal analysis (DTA) of the system studied were used to obtain an insight into the structural information. An investigation of the electrical and optical properties of (Sb2Se3)2 (Sb2Te3)1 thin films prepared by thermal evaporation having different thicknesses (89.2, 214, 223 nm) and annealing temperatures ranging from 300 to 473 K has been carried out. The effect of the thickness and heat treatment on the activation energy ΔE for d.c. conductivity and the density of localized states at the Fermi level N(EF) were carried out. The electrical conductivity measurements depend on the thickness and annealing temperature, and exhibit two types of conduction mechanisms. Optical absorption measurements have been made on as-deposited and annealed films for the investigated system. The optical transition was found to be indirect. The optical energy gap (Eopt) decreases with increasing thickness and annealing temperatures (below Tg). The corresponding band is approximately twice the conduction activation energy. This effect is interpreted in terms of the density of states model proposed by Mott and Davis. © 2002 Kluwer Academic Publisher
Similar content being viewed by others
References
B. R. Chakraborty, B. Ray, R. Bhattachary and A. K. Dutta, J. Phys. Chem. Solids 41 (1980) 913.
B. T. Kolomiets and A. Khzeinaly, Fiz. Tverd Tela 1 (1959) 979.
F. Abd-El-Salam, M. A. Afify and E. Abd. El-Wahabb, Vacuum 44 (1993) 1009.
L. R. Gilbert, B. Van Pelt and C. Wood, J. Phys. Chem. Solids 35 (1974) 1629.
M. Fadel, N. A. Hegab and E. Abd. El-Wahabb, Vacuum 53 (1999) 367.
A. Segura, J. M. Besson, A. Chevy and M. S. Martin Nuovo Cimento B 381 (1977) 345.
D. L. Greenaway and G. Habbeke, J. Phys. Chem. Solids 26 (1965) 1585.
V. V. Sobolev, S. D. Shutov, Yu. V. Popov and S. N. Shestatskii, J. Phys. Status Solidi 30 (1968) 349.
S. D. Shutov, V. V. Sobolev, Yu. V. Popov and S. N. Shestatskii, ibid. 31 (1969) k23.
W. Procarione and C. Wood, ibid. 42 (1970) 871.
J. R. Bosnell, Phys. Technol. 4 (1973) 113.
N. A. Hegab, M. Afify, A. A. El-Shazly and A. E. Bekheet, J. Mater. Sci. 33 (1998) 244.
F. Abd. El-Salam and E. Abd. El-Wahabb, Vacuum 43 (1992) 849.
A. M. Farid, Ph.D. Thesis (1994) Cairo University.
Z. S. El-Mandouh, J. Appl. Phys. 78(12) (1995) 7158.
N. F. Mott, E. A. Davis and R. A. Street, Philos. Mag. 32 (1975) 961.
M. M. Hafiz, M. A. Abdel-Rahim and A. A. Abu-Sehly, Physica B 252 (1998) 207.
M. A. Abdel-Rahim, J. Phys. Chem. Solids 60 (1999) 29.
S. Chaudhuri, S. K. Biswas, A. Choudhury and K. Goswami, J. Non-Cryst. Solid 46 (1981) 171.
E. Ebenzer and K. R. Murali, M. J. Chochalingam and V. K. Venkatesan, J. Mater. Sci. 23 (1988) 3861.
N. F. Mott and E. A. Davis, “Electronic Processes in Non-Crystalline Materials” (Clarendon, Oxford, 1979).
R. M. Hill, Philos. Mag. 24 (1971) 1307.
J. Tauc, in “Amorphous and Liquid Semiconductors”, edited by J. Tau, (Plenum, New York, 1974) Ch. 4.
F. Urbach, Phys. Rev. 92 (1953) 1324.
M. M. El-Samanoudy and M. Fadel, J. Mater. Sci. 27 (1992) 646.
E. A. Davis and N. F. Mott, Philos. Mag. 22 (1970) 903.
E. A. Fagen and H. Fritzsche, J. Non-Cryst. Solid 2 (1970) 180.
N. A. Hegab, M. Fadel and M. M. El-Samanoudy, J. Mater. Sci. 30 (1995) 5461.
T. Lgoond and Y. Toyoshima, J. Non-Cryst. Solids 11 (1973) 304.
U. K. Reddy, Phys. Status Solidi A 89 (1985) 255.
J. Olley. Solid State Commun. 13 (1973) 1437.
M. M. Hafiz, A. H. Moharram, M. A. Abdel-Rahim and A. A. Abu-Sehly, Thin Sold Films 292 (1997) 7.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Farid, A.M., Abd El-Wahabb, E. & Fadel, M. Electrical and optical properties of (Sb2Se3)2 (Sb2Te3)1 thin films. Journal of Materials Science: Materials in Electronics 13, 609–614 (2002). https://doi.org/10.1023/A:1020160417083
Issue Date:
DOI: https://doi.org/10.1023/A:1020160417083