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Effects of in situ thermal annealing on the transmission intensity and electrical properties in Hg0.8Cd0.2Te epilayers grown on CdTe buffer layers

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Department of Physics and Quantum-Functional Semiconductor Research Center, Dongguk University, 3-26, Pildong, Chungku, Seoul, 100-715, Korea

    Y. S. Ryu, B. S. Song & T. W. Kang

  2. Department of Semiconductor Science and Quantum-Functional Semiconductor Research Center, Dongguk University, 3-26, Pildong, Chungku, Seoul, 100-715, Korea

    H. J. Kim

  3. Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul, 139-701, Korea

    T. W. Kim

Authors
  1. Y. S. Ryu
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  2. B. S. Song
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  3. T. W. Kang
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  4. H. J. Kim
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  5. T. W. Kim
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Correspondence to T. W. Kang.

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Ryu, Y.S., Song, B.S., Kang, T.W. et al. Effects of in situ thermal annealing on the transmission intensity and electrical properties in Hg0.8Cd0.2Te epilayers grown on CdTe buffer layers. Journal of Materials Science Letters 21, 1497–1499 (2002). https://doi.org/10.1023/A:1020036129015

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  • DOI: https://doi.org/10.1023/A:1020036129015

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