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Influence of Ti, V, and Ni Dopants on the Electronic Structure and Chemical Bonding in Cubic Silicon Carbide

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Abstract

The electronic structure and chemical bond parameters were studied for 3C–SiC systems with Ti, V, and Ni dopants by the ab initio discrete variation method. Possible dopant (M) sites in crystal are taken into account. As dopant sites we consider the interstitial (Mi) and substitution (Ms) positions. Pair type defects are modeled: Mi–Si vacancy and Ms–Sii defect.

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REFERENCES

  1. V. A. Gubanov, C. Boekema, and C. Y. Fong, Appl. Phys. Lett., 78, No. 2, 216-218 (2001).

    Google Scholar 

  2. Yu. M. Tairov, in: Radioelectronics at St. Petersburg State Electrotechnical University, Vol. 1 [in Russian] (1995), pp. 87-90.

    Google Scholar 

  3. R. F. Sabiryanov, A. L. Ivanovskii, and G. P. Shveikin, Zh. Neorg. Khim., 38, No. 9, 1572-1575 (1993).

    Google Scholar 

  4. N. I. Medvedeva, Zh. I. Gertner, V. V. Kraskovskaya, et al., Neorg. Mater., 31, No. 1, 55-62 (1995).

    Google Scholar 

  5. A. A. Lebedev, Fiz. Tekh. Poluprovodn., 33, No. 2, 129-155 (1999).

    Google Scholar 

  6. T. Penkalya, Essays in Crystal Chemistry [in Russian], Khimiya, Leningrad (1974).

    Google Scholar 

  7. J. Baur, M. Kunzer, and J. Schneider, Phys. Status Solidi (a), 162, 153-172 (1997).

    Google Scholar 

  8. N. T. Son, P. N. Hai, P. T. Huy, et al., Physica B, 274, 655-658 (1999).

    Google Scholar 

  9. É. I. Yurieva and A. L. Ivanovskii, to appear in: Zh. Koord., Khim.

  10. F. W. Averil and D. E. Ellis, J. Chem. Phys., 59, No. 12, 6412-6418 (1973).

    Google Scholar 

  11. O. Gunnarsson and B. I. Lundqvist, Phys. Rev. B, 13, No. 10, 4274-4298 (1976).

    Google Scholar 

  12. É. I. Yurieva and A. L. Ivanovskii, Zh. Strukt. Khim., 41, No. 4, 688-696 (2000).

    Google Scholar 

  13. D. L. Novikov, A. L. Ivanovskii, and V. A. Gubanov, Phys. Status Solidi, 139, No. 1, 257-265 (1987).

    Google Scholar 

  14. V. A. Veryazov, A. V. Leko, A. I. Panin, and R. A. Évarestov, Zh. Fiz. Khim., 74, No. 1, 31-36 (2000).

    Google Scholar 

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  1. Institute of Solid State Chemistry, Ural Branch, Russian Academy of Sciences, Ekaterinburg

    É. I. Yurieva & A. L. Ivanovskii

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  1. É. I. Yurieva
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  2. A. L. Ivanovskii
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Yurieva, É.I., Ivanovskii, A.L. Influence of Ti, V, and Ni Dopants on the Electronic Structure and Chemical Bonding in Cubic Silicon Carbide. Journal of Structural Chemistry 43, 201–205 (2002). https://doi.org/10.1023/A:1019627802984

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