Abstract
The paper deals with the effects of the bombarding-electron energy on the velocity of E4 center (E c – 0.76 eV) formation and the temperature dependences of the efficiency of the latter in a neutral volume and the space-charge region of n–type gallium arsenide. The specimens were Schottky diodes manufactured by depositing titanium onto epitaxial layers of n-GaAs with n = (2–4)·1015 cm3. The defect concentration was obtained by the DLTS spectroscopy method. It is shown that the number of E4 centers in the total amount of irradiation-induced defects sharply increases with increasing the bombarding-electron energy from 1.3 to 2.2 MeV. It is found out that the velocity of introducing E4 centers into the space-charge region does not depend on irradiation temperature and is by far higher than that in a neutral volume. In the latter, however, this velocity is non-linearly increasing with the irradiation temperature. It is assumed that an E4 center is a complex consisting of two unit defects generated in the adjacent sites of the Ga and As sublattices through a single collision. It is noted that its final configuration is formed as a result of interaction of these defects, which depends on the dynamics of transformation of their primary charge states.
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Peshev, V.V., Surzhikov, A.P. Formation of E4-Centers (E c – 0.76 eV) in Gallium Arsenide. Russian Physics Journal 45, 91–93 (2002). https://doi.org/10.1023/A:1019602025584
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DOI: https://doi.org/10.1023/A:1019602025584