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Optical Properties of Semiconducting Ruthenium Silicide

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Abstract

The optical properties of ruthenium silicide Ru2Si3 have been studied theoretically and experimentally. The energy band spectrum and optical properties were simulated with the aid of the first‐principle self‐consistent method of linear attached plane waves. The spectral dependence of the absorption coefficient in the 0.52.2 eV energy range was measured experimentally by the photothermal refractive spectroscopy method. It is established that ruthenium silicide is a direct‐gap semiconductor having an energy gap of 0.84 eV and a low oscillator strength of the first direct transition.

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Authors and Affiliations

  1. Belarusian State University of Informatics Science and Radioelectronics, 6 P. Brovka Str., Minsk, 220013, Belarus

    L. I. Ivanenko, V. L. Shaposhnikov & V. E. Borisenko

  2. Institute of Thin Film and Ionic Technique, Ulih Research Center, Ulih, Germany

    D. Lenssen, R. Carius & S. Mantl

Authors
  1. L. I. Ivanenko
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  2. V. L. Shaposhnikov
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  3. V. E. Borisenko
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  4. D. Lenssen
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  5. R. Carius
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  6. S. Mantl
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Ivanenko, L.I., Shaposhnikov, V.L., Borisenko, V.E. et al. Optical Properties of Semiconducting Ruthenium Silicide. Journal of Applied Spectroscopy 68, 320–325 (2001). https://doi.org/10.1023/A:1019284623475

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  • DOI: https://doi.org/10.1023/A:1019284623475

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