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Influence of Mg and Si on the Oxidation of Aluminum

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Abstract

Test materials of pure Al, Al alloyed with 10,50, and 190 ppm Mg, and Al alloyed with 10 ppm Mg + 500ppm Si were oxidized at temperatures ranging from 250 to620°C. The composition and thickness of the oxide film were determined by electronspectroscopy for chemical analysis (ESCA) and Augerspectroscopy. Below the crystallization temperature(400°C) of Al2O3,Mg2+ is enriched in the interior portion of the oxide. The enrichment of Mg2+gives a somewhat thinner oxide compared with the oxideformed on pure Al. Above 400°C, MgO is formed as aseparate phase on the surface of theAl2O3. The Si-containing material showed Si4+ enrichment inthe surface oxide. Mg2+ species were notdetectable. Silicon is also strongly enriched in themetal phase just below the metal-oxideinterface.

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Authors
  1. Anders Nylund
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  2. Kaoru Mizuno
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  3. Ingemar Olefjord
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Nylund, A., Mizuno, K. & Olefjord, I. Influence of Mg and Si on the Oxidation of Aluminum. Oxidation of Metals 50, 309–325 (1998). https://doi.org/10.1023/A:1018844506192

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