Skip to main content
Log in

The growth of disilicide layers on the interface: W/Mo-melt (Cu-Si) of near-equilibrium composition

  • Published:
Journal of Materials Science Letters

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

References

  1. W. NERNST, Z.Phys. Chem. 47 (1904) 52.

    CAS  Google Scholar 

  2. E. BRUNNER, ibid. 47 (1904) 55.

    Google Scholar 

  3. V. V. SKOROHOD, M. M. CHURAKOV and V. P. TITOV, High Temp.-High Press. 26 (1994) 151.

    CAS  Google Scholar 

  4. Idem, Ukr. Khim. Zh. (to be published in 1997).

  5. Idem, Powd. Metall. Met. Ceram. 34 (1995) 138.

    Article  Google Scholar 

  6. J. R. EIFERT, D. A. CHATFIELD, G. W. POWELL and J. W. SPRETNAK, Trans. TMS-AIME 242 (1968) 66.

    CAS  Google Scholar 

  7. A. G. GUY and HIROSHI OIKAWA, ibid. 245 (1969) 2293.

    CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

SKOROHOD , V.V., CHURAKOV , M.M. & Titov, V.P. The growth of disilicide layers on the interface: W/Mo-melt (Cu-Si) of near-equilibrium composition. Journal of Materials Science Letters 16, 1689–1690 (1997). https://doi.org/10.1023/A:1018590417819

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1023/A:1018590417819

Keywords

Navigation