Abstract
Copper (Cu) films were deposited on sputtered TiN with metallorganic chemical vapour deposition (MOCVD) from (hexafluoroacetylacetonate) Cu(I) (vinyltrimethylsilane) [(hfac)Cu(I)(VTMS)] at substrate temperatures of 100–300°C, total pressures of 10–2000 mtorr (1–300 Pa) and bubbler temperature of 50°C with Ar carrier gas. Cu was deposited in the form of discontinuous islands up to the film thickness of about 100 nm on the TiN substrate. The orientation of growing films was changed from random orientation to 〈1 1 1〉 with increasing deposition time and temperature. Increasing temperature increased the surface roughness of the film, and grain coalescence. Resistivity was increased due to the carbon incorporation from the thermal decomposition of Cu precursor.
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J. LI, T. E. SEIDEL and J. W. MAYER, MRS Bulletin XIX (1994) 15.
S. VAIDYA, D. B. FRASER and A. K. SHINHA, in Proceedings of the 18th Annual Reliability Physics Symposium (New York, IEEE, 1980) p. 165.
H. U. SCHREIBER and B. GRABE, Solid State Electron. 24 (1981) 1135.
L. KRUSIN-ELBAUM, M. WITTMER, C. Y. TING and J. J. CUOMO, Thin Solid Films 104 (1983) 81.
M. B. CHAMBERLAI, ibid. 91 (1982) 155.
H. T. CHIU and W. P. CHANG, J. Mater. Res. 18 (1983) 1353.
Idem, J. Mater. Sci. Lett. 11 (1992) 560.
J. A. T. NORMAN, B. A. MURATORE, P. N. DYER, D. A. ROBERTS and A. K. HOCHBERG, J. de Physique IV (1991) C2.
S. K. REYNOLDS, C. J. SMART, E. F. BARAN, T. H. BAUM and C. E. LARSON, Appl. Phys. Lett. 59 (1991) 2332.
H. K. SHIN, K. M. CHI, J. FARKAS, M. J. HAMPDENSMITH, T. T. KODAS and E. N. DUESLER, Inorg. Chem. 31 (1992) 424.
G. S. GIROAMI, P. M. JEFFRIES and L. H. DUBOIS, J. Amer. Chem. Soc. 115 (1993) 1015.
T. T. KODAS and M. J. HAMPDEN-SMITH, in “The Chemistry of Metal CVD”, (VCH, Cambridge, 1994) p. 243.
M. J. HAMPDEN-SMITH and T. T. KODA, Polyhedron 14 (1995) 699.
A. JAIN, A. V. GELATOS, T. T. KODAS, M. J. HAMPDEN-SMITH, R. MARSH and C. J. MOGAB, Thin Solid Films 262 (1995) 52.
F. C. EVERSTEYN, Philips Res. Rep. 29 (1974) 45.
A. JAIN, K. M. CHI, M. J. HAMPDEN-SMITH, T. T. KODAS, M. F. PAFFETT and J. D. FARR, J. Mater. Res. 7 (1992) 261.
A. JAIN, K. M. CHI, M. J. HAMPDEN-SMITH and T. T. KODAS, J. Electrochem. Soc. 140 (1993) 1434.
S. L. COHEN and M. LIER, J. Vac. Sci. Technol. A 10 (1992) 863.
S. D. HERSEE and J. M. BALLINGALL, ibid. 8 (1990) 800.
V. M. DONNELLY and M. E. GROSS, ibid. 11 (1993) 66.
D. TEMPLE and A. REISMAN, J. Electrochem. Soc. 136 (1989) 3525.
J. LI and Y. SHACHAM-DIAMAND, ibid. 139 (1992) L37.
B. D. CULLITY, in “Elements of X-ray Diffraction”, 2nd Edn, (Addison-Wesley, Reading MA, 1978) p. 102.
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YOEN, HY., PARK, YB. & RHEE, SW. Growth of copper thin films on sputtered-TiN surfaces by metallorganic chemical vapour deposition from (hfac)Cu(I)(VTMS). Journal of Materials Science: Materials in Electronics 8, 189–194 (1997). https://doi.org/10.1023/A:1018550331041
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DOI: https://doi.org/10.1023/A:1018550331041