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High-resolution transmission electron microscopy investigation of a stacking fault in β-Si3N4

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Abstract

High-resolution transmission electron microscopy images of stacking faults on (0 0 1) and (1 0 1) planes in a β-Si3N4 whisker were obtained and compared to image simulations. This procedure showed that the atomic structure of the four atomic planes around the (0 0 1) stacking fault plane in the β-phase is very similar to that of the unit cell of α-Si3N4 crystal. The stacking fault was observed to climb under electron irradiation in the microscope.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario, L8S 4L7, Canada

    X. G NING

  2. Laboratory of Atomic Imaging of Solids, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110015, People’s Republic of China

    H. Q YE

Authors
  1. X. G NING
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  2. D. S WILKINSON
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  3. G. C WEATHERLY
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  4. H. Q YE
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NING, X.G., WILKINSON, D.S., WEATHERLY, G.C. et al. High-resolution transmission electron microscopy investigation of a stacking fault in β-Si3N4. Journal of Materials Science 32, 1431–1436 (1997). https://doi.org/10.1023/A:1018541631100

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