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Cyclic fatigue of reaction-bonded silicon nitride at elevated temperatures

Journal of Materials Science volume 32, pages 949–955 (1997)Cite this article

Abstract

Cyclic and static loading tests were performed on reaction-bonded silicon nitride from 1000–1400 °C in air. This porous, fine-grained material contained no glassy grain-boundary phase and exhibited no slow crack growth at room temperature. Under cyclic loading, the crack-growth behaviour at 1000 °C was similar to room-temperature results; however, at 1200 and 1400 °C crack-growth rates increased significantly. Under static loading, significant crack growth was detected at 1000 °C and increased with temperature. Most of the crack growth under cyclic loading was attributed to slow crack-growth mechanisms, but evidence of cyclic crack-growth mechanisms were also observed. Oxidation played a major role in crack-growth velocity at high temperature.

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Authors and Affiliations

  1. Department of Materials Science, Robert R. McCormick School of Engineering and Applied Science, Northwestern University, Evanston, IL, 60208, USA

    R. J CHRISTENSEN & K. T FABER

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  1. R. J CHRISTENSEN
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  2. K. T FABER
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CHRISTENSEN, R.J., FABER, K.T. Cyclic fatigue of reaction-bonded silicon nitride at elevated temperatures. Journal of Materials Science 32, 949–955 (1997). https://doi.org/10.1023/A:1018509902025

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  • DOI: https://doi.org/10.1023/A:1018509902025

Keywords

  • Cyclic Loading
  • Silicon Nitride
  • Slow Crack Growth
  • Cyclic Fatigue
  • Primary Crack