Cyclic and static loading tests were performed on reaction-bonded silicon nitride from 1000–1400 °C in air. This porous, fine-grained material contained no glassy grain-boundary phase and exhibited no slow crack growth at room temperature. Under cyclic loading, the crack-growth behaviour at 1000 °C was similar to room-temperature results; however, at 1200 and 1400 °C crack-growth rates increased significantly. Under static loading, significant crack growth was detected at 1000 °C and increased with temperature. Most of the crack growth under cyclic loading was attributed to slow crack-growth mechanisms, but evidence of cyclic crack-growth mechanisms were also observed. Oxidation played a major role in crack-growth velocity at high temperature.
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CHRISTENSEN, R.J., FABER, K.T. Cyclic fatigue of reaction-bonded silicon nitride at elevated temperatures. Journal of Materials Science 32, 949–955 (1997). https://doi.org/10.1023/A:1018509902025
- Cyclic Loading
- Silicon Nitride
- Slow Crack Growth
- Cyclic Fatigue
- Primary Crack