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Effects of excess Pb on structural and electrical properties of Pb(Zr0.48Ti0.52)O3 thin films using MOD process

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Abstract

Pb(Zr0.48Ti0.52)O3 thin films at 20% excess Pb were synthesized on Pt/Ti/SiO2/Si(100) substrates at different annealing temperatures by a metal-organic decomposition process. The microstructure of the PZT films was investigated by x-ray diffraction and atomic force microscopy. The composition of the films was characterized by Rutherford Backscattering Spectroscopy (RBS). These results showed that The PZT films have perovskite phase coexisted with PbO2 phase. The PbO2 phase mainly was formed by excess Pb which congregate at boundaries of crystalline grains during the annealing process and may be absorbed part of oxygen ion at normal sites, thus leading to an increase of oxygen vacancies in the PZT film. PbO2 phase and oxygen vacancies act as pinning centres, which has an effect on the ferroelectric domain switching. This eventually resulted in an increase of fatigue rate in PZT films.

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Authors and Affiliations

  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai, 200050, People's Republic of China

    Zhitang Song, Xiangrong Zhu, Lianwei Wang, Xiaorong Fu & Chenglu Lin

  2. Shanghai Institute of Nuclear Research, Chinese Academy of Sciences, Shanghai, 201800, People's Republic of China

    Jianxia Gao

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  1. Zhitang Song
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  2. Jianxia Gao
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  3. Xiangrong Zhu
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  4. Lianwei Wang
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  5. Xiaorong Fu
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  6. Chenglu Lin
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Song, Z., Gao, J., Zhu, X. et al. Effects of excess Pb on structural and electrical properties of Pb(Zr0.48Ti0.52)O3 thin films using MOD process. Journal of Materials Science 36, 4285–4289 (2001). https://doi.org/10.1023/A:1017999223329

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  • DOI: https://doi.org/10.1023/A:1017999223329

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