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Conduction mechanism in amorphous In2III X3VI thin films

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Abstract

Amorphous In2 IIIX3 VIfilms (X = Te or Se) are obtained by vacuum thermal evaporation of bulk materials on glass substrates. The current - voltage characteristics in the temperature range 298–378 K and in the thickness range 212–652 nm exhibited a transition from an ohmic region in the lower field followed by non-ohmic region in the high field region, which has been explained by the anomalous Poole-Frenkel effect. The temperature dependence of current in the ohmic region is of thermally activated process. The variation of dielectric constant with temperature is investigated for the two compounds.

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Authors and Affiliations

  1. Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt

    N. A. Hegab & A. E. Bekheet

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  1. N. A. Hegab
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  2. A. E. Bekheet
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Hegab, N.A., Bekheet, A.E. Conduction mechanism in amorphous In2III X3VI thin films. Journal of Materials Science 36, 3817–3823 (2001). https://doi.org/10.1023/A:1017998422285

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