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A TEM investigation of Zn3As2 grown on (001) and (111) InP by MOVPE

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Abstract

A TEM investigation of MOVPE grown Zn3As2 revealed the presence of a thin epitaxial Zn3P2 intermediate layer between the InP substrate and the Zn3As2 overgrowth. A model of the orientation relationships between Zn3As2, Zn3P2 and InP is presented. The origin of the Zn3P2 layer was ascribed to the diffusion of Zn atoms into the InP substrate, aided simultaneously by P diffusion from the substrate. A simulation of the Zn3As2 lattice image is presented for the first time, together with a high resolution transmission electron microscopy (HRTEM) image of the Zn3As2/Zn3P2 interface.

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References

  1. B. Chelluri, T. Y. Chang, A. Ourmazd, A. H. Dayem, J. L. Zyskind and A. Srivastava, J.Cryst. Growth 81 (1987) 530.

    Google Scholar 

  2. W. J. Turner, A. S. Fischler and W. E. Reese, Physical Review 121 (1961) 759.

    Google Scholar 

  3. G. J. Scriven and A. W. R. Leitch, Thin Solid Films, 2001, submitted.

  4. B. Sujak-Cyrul, B. Kolodka and J. Misiewicz, J.Phys.Chem.Solids 43 (1982) 1045.

    Google Scholar 

  5. A. Hupfer, D. Hirsch and S. Schulze, Phys.Stat.Sol. (b) 152 (1989) 505.

    Google Scholar 

  6. K. SieraÑski and J. Szatkowski, ibid. 173 (1992) K25.

    Google Scholar 

  7. B. Chelluri, T. Y. Chang, A. Ourmazd, A. H. Dayem, J. L. Zyskind and A. Srivastava, Appl.Phys. Lett. 49 (1986) 1665.

    Google Scholar 

  8. A. Pietraszko and K. Lukaszewicz, Phys.Stat.Sol.(a) 18 (1973) 723.

    Google Scholar 

  9. G. J. Scriven, A. W. R. Leitch, J. H. Neethling, V. V. Kozyrkov and V. J. Watters, J.Cryst.Growth 170 (1997) 813.

    Google Scholar 

  10. P. Stadelman, EMS 3.3., Ultramicroscopy 21 (1987) 131.

    Google Scholar 

  11. K. SieraÑski, J. Szatkowski and J. Misiewicz, Physical Review B 50 (1994) 7331.

    Google Scholar 

  12. R. W. G. Wyckoff, “Crystal Structures: Volume 2, Inorganic Compounds RXn, RnMX2, RnMX3” (Interscience Publishers, New York, 1964) p. 32.

    Google Scholar 

  13. D. M. Hwang, S. A. Schwarz, P. Mei, R. Bhat, T. Venkatesan, L. Nazar and C. L. Schwarz, Appl. Phys.Lett. 54 (1989) 1160.

    Google Scholar 

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Authors and Affiliations

  1. Department of Physics, University of Port Elizabeth, P.O. Box 1600, Port Elizabeth, 6000, South Africa

    J. H. Neethling & G. J. Scriven

  2. Philips Electron Optics, Eindhoven, The Netherlands

    T. Krekels

Authors
  1. J. H. Neethling
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  2. G. J. Scriven
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  3. T. Krekels
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Correspondence to J. H. Neethling.

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Neethling, J.H., Scriven, G.J. & Krekels, T. A TEM investigation of Zn3As2 grown on (001) and (111) InP by MOVPE. Journal of Materials Science 36, 3997–4002 (2001). https://doi.org/10.1023/A:1017934624840

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