Abstract
High-temperature tensile deformation behavior of high-purity HIPed silicon nitride material was investigated in the temperature range between 1600°C and 1750°C. Recoverable anelastic and non-recoverable deformation was observed in high-purity HIPed silicon nitride. A power-law deformation model analogous to rheological models was used to distinguish the different deformation components. A stress exponent n = 1.64 and an activation energy Q 1 = 708 kJ/mol was determined for the non-recoverable deformation. For the anelastic deformation a stress exponent p = 4 and an activation energy Q 3 = 619 kJ/mol was observed. Diffusional creep and grain boundary sliding with the accomodation process responsible for the anelastic component are discussed as deformation mechanisms.
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Thurn, G., Wakai, F. & Aldinger, F. Ultrahigh-temperature deformation of high-purity HIPed Si3N4. Journal of Materials Science 36, 1459–1467 (2001). https://doi.org/10.1023/A:1017592528726
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DOI: https://doi.org/10.1023/A:1017592528726