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3He Correlation Energy in the Random Phase Approximation: the One-Ripplon-Exchange Potential in Thin 3He–4He Superfluid Films

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Abstract

A new approach to the calculation of correlation energies in the random phase approximation (RPA) is introduced. The method is applied to the system of adsorbed 3He in thin 4He superfluid films. The 3He component interacts by means of the exchange of virtual surface interactions (ripplons) in addition to the usual atom-atom interaction. We report on a calculation of the RPA contribution to the 3He ground-state energy of a previously introduced model for this effective interaction called the one-ripplon-exchange potential (OREP). VOREP is manifestly frequency dependent and complex. In this paper we study the differences in the RPA contribution to the ground-state energy between the fully complex and frequency dependent VOREP and VOREP in the real, static limit.

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Authors and Affiliations

  1. Department of Physics, Washington State University, Pullman, WA, 99164-2814, USA

    R. H. Anderson & M. D. Miller

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  1. R. H. Anderson
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  2. M. D. Miller
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Anderson, R.H., Miller, M.D. 3He Correlation Energy in the Random Phase Approximation: the One-Ripplon-Exchange Potential in Thin 3He–4He Superfluid Films. Journal of Low Temperature Physics 121, 513–518 (2000). https://doi.org/10.1023/A:1017586721504

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