Abstract
An electronic model for dislocation movement in covalent semiconductor crystals is proposed. In assessing the dislocation mobility, the model takes into account the concentration of free electrons, band-structure parameters, and dislocation charge. The model is used to interpret experimental data on the photoplastic effect in polycrystalline zinc selenide.
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Shchurov, A.F., Kruglov, A.V. & Perevoshchikov, V.A. Band Structure and Low-Temperature Plasticity of Covalent Crystals. Inorganic Materials 37, 349–353 (2001). https://doi.org/10.1023/A:1017571609977
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DOI: https://doi.org/10.1023/A:1017571609977