Abstract
The photoelectric properties of n-SnS1.9Se0.1 /p-GaSe〈Cd〉 heterojunctions prepared by optical-contact bonding were studied, and the energy-band diagram of the heterojunctions was constructed using capacitance–voltage data. Charge transport through the heterojunctions was found to be determined by carrier diffusion. The spectral response of the heterojunctions has the form of a relatively narrow band (ΔE= 0.2 eV) in the visible range.
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Katerinchuk, V.N., Kovalyuk, Z.D., Netyaga, V.V. et al. Heterojunctions Produced from the Layered Semiconductors SnS1.9Se0.1and GaSe〈Cd〉. Inorganic Materials 37, 336–338 (2001). https://doi.org/10.1023/A:1017515524998
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DOI: https://doi.org/10.1023/A:1017515524998