Abstract
We report herewith new experimental data concerning the synthesis of carbon-nitride thin films by reactive pulsed laser deposition (λ = 248nm, τFWHM ≤ 30 ns) from a graphite target in low pressure nitrogen (0.2, 1 and 50 Pa) at a level of the incident laser fluence of 22 J/cm2. The obtained structures were studied by Raman spectrometry and microhardness determinations. We have observed that an increase of the N2 pressure leads to an increase in the N2 content in the deposited films but causes the reduction ofthe amount of the sp3 bounded C and the decrease of the microhardness of the obtained structures.
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György, E., Mihailescu, I.N., Baleva, M. et al. About the possible diminution of the sp3 C presence along with the increase of the nitrogen enclosure in the CNx thin films produced by reactive pulsed laser deposition. Journal of Materials Science 36, 1951–1956 (2001). https://doi.org/10.1023/A:1017502126331
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DOI: https://doi.org/10.1023/A:1017502126331