Abstract
Pb1 – x In x melts were proposed to be used as In vapor sources, in combination with separate Pb and Te sources, in depositing PbTe<In> films onto Si substrates by a modified hot-wall method. Under the assumption that the presence of Pb in Pb1 – x In x melts may raise the In partial pressure, the vaporization behavior of Pb1 – x In x (0.05 ≤ x ≤ 0.70) was studied between 900 and 1200 K in the reaction chamber of the deposition unit. Using electron probe x-ray microanalysis and x-ray diffraction, all the deposited films were shown to contain In. The In content of the Pb1 – y In y deposits varied in the range 0.002 <y < 0.07 and increased with increasing In concentration in the Pb1 – x In x melt and with increasing vapor source temperature. The vapor over molten Pb1 – x In x was shown to exhibit a positive deviation from ideality.
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Samoilov, A.M., Sharov, M.K., Buchnev, S.A. et al. Pb and In Codeposition in the Vacuum Growth of PbTe<In> Films on Si Substrates. Inorganic Materials 38, 655–660 (2002). https://doi.org/10.1023/A:1016275905541
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DOI: https://doi.org/10.1023/A:1016275905541