Abstract
CuAlS2 , CuAlSe2 , and CuAlS2x Se2(1 – x) (0 < x < 1) single crystals were grown by chemical vapor transport in a close-spaced geometry and characterized by x-ray diffraction and differential thermal analysis. The results were used to map out the CuAlSe2–CuAlS2 phase diagram. The density of the crystals was found to vary linearly with x, while microhardness shows a maximum. The transmission and reflection data obtained near the intrinsic edge were used to determine the band gap E g of CuAlS2 , CuAlSe2 , and the solid solutions. E g was found to vary nonlinearly with composition.
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REFERENCES
Shay, J.L. and Wernick, J.H., Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications, New York: Pergamon, 1975.
Bodnar', I.V., Kesamanly, F.P., Rud', V.Yu., and Rud', Yu.V., Photoluminescence of CuAlxIn1-x S2 Single Crystals, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1995, vol. 29, no. 2, pp. 318–322.
Bodnar, I.T. and Bodnar, I.V., Dispersion and Temperature Dependence of Refractive Indices of Some AIBIII Compounds, Phys. Status Solidi A, 1999, vol. 121, no. 2, pp. 247–250.
Tikhonov, V.N., Photometric Determination of Aluminum with Methylthymol Blue, Zh. Anal. Khim., 1996, vol. 21, no. 3, pp. 275–280.
Patsuk, V.V., High-Speed Determination of Small Amounts of Selenium, Zh. Anal. Khim., 1957, vol. 12, no. 2, pp. 230–235.
Starobinets, L.G., Ishchenko, N.N., and Ganago, L.I., Analysis of CuAlS2–CuInS2 Semiconductor Alloys, Izv. Akad. Nauk BSSR, Ser. Khim. Nauk., 1988, no. 1, pp. 111–114.
Abrahams, S.C. and Bernstein, J.L., Piezoelectric Nonlinear Optic CuGaS2 and CuInS2 Crystal Structure: Sublattice Distortion in A1B3 C 62 and A2B4 C 52 Type Chalcopyrites, J. Chem. Phys., 1973, vol. 59, no. 10, pp. 5415–5422.
Bodnar', I.V., Orlova, N.S., and Tsyrel'chuk, I.N., Thermal Expansion of CuAlxIn1-x Se2 Chalcopyrite Solid Solutions, Neorg. Mater., 1995, vol. 31, no. 7, pp. 899–904 [Inorg. Mater. (Engl. Transl.), vol. 31, no. 7, pp. 824–829].
Il'inskii, G.A., Opredelenie plotnosti mineralov (Determination of mineral density), Leningrad: Nedra, 1975.
Bodnar', I.V., Growth and Physicochemical Properties of CuGaS2, CuAlS2, and CuAlxGa1-x S2 Single Crystals, Zh. Neorg. Khim., 1998, vol. 43, no. 12, pp. 2090–2094.
Bodnar, I.V., CuxAg1-x GaS2 Solid Solution, Cryst. Res. Technol., 1997, vol. 32, no. 2, pp. 235–241.
Glazov, V.M. and Vigdorovich, V.N., Mikrotverdost'metallov i poluprovodnikov (Microhardness of metals and semiconductors), Moscow: Metallurgiya, 1969.
Yamamoto, N. and Miyauchi, T., Growth and Properties of CuGaxIn1-x S2, Bull. Univ. Osaka Prefect., 1974, vol. 2, no. 2, pp. 147–151.
Van Vechten, J.A. and Bergstresser, T.K., Electronic Structures of Semiconductors Alloys, Phys. Rev. B: Solid State, 1970, vol. 1, no. 8, pp. 3351–3358.
Hill, R. and Richardson, D., The Variation of Energy Gap with Composition in ZnSe–Te Alloys, J. Phys. C: Solid State Phys., 1973, vol. 6, no. 5, pp. 115–117.
Hill, R., Energy-Gap Variation in Semiconductor Alloys, J. Phys. C: Solid State Phys., 1974, vol. 7, no. 3, pp. 521–526.
Bodnar, I.V. and Lukomskii, A.I., The Concentration Dependence of the Band Gap for CuGaxIn1-x S2 and AgGaxIn1-x S2 Solid Solutions, Phys. Status Solidi A, 1986, vol. 98, no. 2, pp. 165–169.
Bodnar, I.V., Bologa, A.P., and Korzun, B.V., Composition Dependence of the Band Gap of CuGaIn1-x Se2, Phys. Status Solidi B, 1982, vol. 109, no. 1, pp. 31–33.
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Bodnar', I.V. Growth and Properties of CuAlS2x Se2(1 – x) Single Crystals. Inorganic Materials 38, 647–651 (2002). https://doi.org/10.1023/A:1016271804632
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DOI: https://doi.org/10.1023/A:1016271804632