Abstract
The ground state donor binding energy is estimated using the simple first order perturbation method for a GaAs-Al x Ga1−x As spherical quantum dot. The calculated energy is computed as a function of Al-concentration. Donor binding energy is found to be quite sensitive to Al-concentration (x), specifically for smallx. Furthermore, the binding energy is found to be highest for the smallest and the center-doped dot indicating the strongest confinement in those cases.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J. Brown and N. Spector: J. Appl. Phys.59 (1986) 1179.
N. Porras-Montenegro and S.T. Perez-Merchancano: Phys. Rev. B46 (1992) 9780.
N. Porras-Montenegro, S.T. Perez-Merchancano, and A. Latge: J. Appl. Phys.74 (1993) 7624.
C. Bose: J. Appl. Phys.83 (1998) 3089.
A.I. Ekimov, I.A. Kudryavstev, M.G. Ivanov, and A.L. Efros: Sov. Phys. Solid State31 (1989) 1385.
J.M. Ferreyra and C.R. Proetto: Phys. Rev. B52 (1995) R2309.
S. Flugge:Practical Quantum Mechanics. Springer-Verlag, Berlin, 1994.
M. Rotenberg, R. Bivins, N. Metropolis, and J.K. Wooten:The 3-j and 6-j symbols. Mass.: Technology Press, Cambridge, 1959.
S. Adachi: J. Appl. Phys.58 (1985) R-1.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Bose, C., Sarkar, C.K. Dependence of the lowest impurity state on alloy composition in GaAs-(Al,Ga)As quantum dots. Czech J Phys 52, 877–881 (2002). https://doi.org/10.1023/A:1016271227232
Received:
Issue Date:
DOI: https://doi.org/10.1023/A:1016271227232