Abstract
Silicon doped with Er, Gd, or Ho to concentrations from 3 × 1015 to 2.3 × 1017 cm–3 was found to exhibit a negative magnetoresistance at 77 K, which is a manifestation of the giant magnetoresistive effect. This effect is due to the alignment of the magnetic moments of rare-earth clusters along the applied magnetic field, which reduces the scattering of charge carriers.
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Brinkevich, D.I., Lukashevich, M.G., Prosolovich, V.S. et al. Effect of Rare-Earth Impurities on the Magnetoresistance of Single-Crystal Silicon. Inorganic Materials 38, 637–639 (2002). https://doi.org/10.1023/A:1016239519654
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DOI: https://doi.org/10.1023/A:1016239519654