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Chemical Vapor Deposition of Boron Nitride in the B–N–H–He–O System

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Abstract

Thermodynamic analysis of boron nitride (cubic, hexagonal, and wurtzite forms) chemical vapor deposition in the B–N–H–He–O system was carried out for temperatures from 300 to 2100 K, a total pressure of 1.33 Pa, residual pressures from 1.33 × 10–5 to 0.133 Pa, and a wide range of He : B3N3H6 ratios. The conditions for the deposition of c-BN, h-BN, or mixtures of BN and B2O3 (solid or liquid) were established. Oxygen impurities are shown to have a significant effect on the temperature stability limits of the condensed phases involved.

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Authors and Affiliations

  1. Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russia

    A. N. Golubenko

  2. Institute of Inorganic Chemistry, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent'eva 3, Novosibirsk, 630090, Russia

    M. L. Kosinova, V. A. Titov & F. A. Kuznetsov

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  1. A. N. Golubenko
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  2. M. L. Kosinova
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  3. V. A. Titov
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  4. F. A. Kuznetsov
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Golubenko, A.N., Kosinova, M.L., Titov, V.A. et al. Chemical Vapor Deposition of Boron Nitride in the B–N–H–He–O System. Inorganic Materials 38, 677–682 (2002). https://doi.org/10.1023/A:1016236324197

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