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Characterization of laser-ablated V2O5 thin films

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Abstract

Vanadium pentoxide thin films have been prepared by the pulsed laser deposition technique. The influence of substrate temperature on the growth of V2O5 films was studied. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements have been carried out in order to understand the growth mechanism. The crystallization in V2O5 thin films starts at deposition temperatures as low as 473 K and the grain size increased with deposition temperature. The films exhibited predominantly (0 0 1) orientation, representing the orthorhombic layered structure. The infrared (IR) and Raman measurements supported the above data.

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Authors and Affiliations

  1. Thin film laboratory, Department of Physics, S. V. University, Tirupati-, 517 502, India

    K. V. Madhuri, K. S. Rao, B. S. Naidu & O. M. Hussain

  2. Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai-, 400 005, India

    R. Pinto

Authors
  1. K. V. Madhuri
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  2. K. S. Rao
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  3. B. S. Naidu
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  4. O. M. Hussain
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  5. R. Pinto
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Madhuri, K.V., Rao, K.S., Naidu, B.S. et al. Characterization of laser-ablated V2O5 thin films. Journal of Materials Science: Materials in Electronics 13, 425–432 (2002). https://doi.org/10.1023/A:1016048728659

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