Abstract
It is shown by experiment that the doping of ZnO films with Group-IB acceptors—Cu, Ag, and Au—influences the photoluminescence spectra of the films as well as their electrical properties. Specifically, this reduces the emission in the UV region and intensifies it in the visible region. The respective distances of the Cu, Ag, and Au energy levels from the valence band are found to be 0.38, 0.20, and 0.45 eV.
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REFERENCES
Yamamoto, T. and Katayama-Yoshida, H., Solution Using a Codoping Method to Unipolarity for the Fabrication of p-Type ZnO, Jpn. J. Appl. Phys., 1999, vol. 38, pp. L166-L169.
Joseph, M., Tabata, H., and Kawai, T., p-Type Electrical Conduction in ZnO Thin Films by Ga and N Codoping, Jpn. J. Appl. Phys., 1999, vol. 38, pp. L1205-L1207.
Minegishi, K., Kowai, Y., Kikuchi, Y., Yano, K., Kasuga, M., and Shimizu, A., Growth of p-Type Zinc Oxide Films by Chemical Vapor Deposition, Jpn. J. Appl. Phys., 1997, vol. 36, pp. L1453-L1455.
Ryu, Y.R., Kim, W.J., and White, H.W., Fabrication of Homostructural ZnO p-n Junctions, J. Cryst. Growth, 2000, vol. 219, pp. 419-422.
Guo, X., Choi, J., Tabata, H., and Kawai, T., Fabrication and Optoelectronic Properties of a Transparent ZnO Homosructural Light-Emitting Diode, Jpn. J. Appl. Phys., 2001, vol. 40, pp. L177-L180.
Zhang, S.B., Wei, S.H., and Zunger, A., Intrinsic n-Type versus p-Type Doping Asymmetry and the Defect Physics of ZnO, Phys. Rev. B, 2001, vol. 63, pp. 205-208.
Aven, M. and Prener, J.S., Physics and Chemistry of II-VI Compounds, Amsterdam: North-Holland, 1967.
Vanheusden, K., Seager, C.H., Warren, W.L., Tallant, D.R., Caruso, J., and Kodas, T.T., Green Photoluminescence Efficiency and Free-Carrier Density in ZnO Phosphor Powders Prepared by Spray Pyrolysis, J. Lumin., 1997, vol. 75, pp. 11-16.
Van Gool, W., Philips Res. Rep., 1963, suppl. no. 3, p. 61.
Georgobiani, A.N. and Kotlyarevskii, M.B., Radical Beam Gettering Epitaxy of II-VI Compounds, Nucl. Phys. B (Proc. Suppl.), 1998, vol. 61, pp. 341-346.
Georgobiani, A.N., Kotlyarevskii, M.B., Kidalov, V.V., and Rogozin, I.V., ZnO/ZnSe Structures Prepared by Radical-Beam Getter Epitaxy, Inorg. Mater., 1997, vol. 33, pp. 185-188.
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Gruzintsev, A.N., Volkov, V.T., Khodos, I.I. et al. Luminescent Properties of ZnO Films Doped with Group-IB Acceptors. Russian Microelectronics 31, 200–205 (2002). https://doi.org/10.1023/A:1015467204997
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DOI: https://doi.org/10.1023/A:1015467204997