Abstract
Data are presented on the kinetics and mechanism of copper deposition from Cu(dpm)2 vapor in a hydrogen atmosphere at normal pressure. From kinetic analysis of the deposition rate as a function of substrate temperature (200–390°C) and Cu(dpm)2 vapor pressure (≤7.8 Pa), the main parameters of kinetically limited deposition were determined: activation energy of 27 ± 7 kJ/mol, preexponential factor of (2.9 ± 1.8) × 102 cm/s, and reaction order of unity. Under diffusion-control conditions, the diffusion rate constant is 4.8 cm/s, and the thickness of the diffusion layer is 8 × 10–2 cm. The films grow by a mixed (island–layer) mechanism, and their electrical resistivity is close to that of bulk copper.
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Bakovets, V.V., Levashova, T.M., Dolgovesova, I.P. et al. Chemical Vapor Deposition of Copper Films from Copper Dipivaloylmethanate in Hydrogen Atmosphere. Inorganic Materials 38, 457–463 (2002). https://doi.org/10.1023/A:1015462820076
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DOI: https://doi.org/10.1023/A:1015462820076