Skip to main content
Log in

Current–Voltage Characteristics of EuGa2S4<Co> Single Crystals

  • Published:
Inorganic Materials Aims and scope

Abstract

The current–voltage characteristics of EuGa2S4<Co> single crystals were measured from 80 to 300 K with the aim of elucidating the mechanism of electrical transport. The results, interpreted as evidence of space-charge-limited currents with an exponential distribution of trap energies, were used to determine the trap depth (E t = 0.30 eV), trap concentration (N t = 4 × 1013 cm–3), Fermi energy (E F = 0.51 eV), equilibrium carrier concentration (p 0 = 9 × 109 cm–3), contact potential difference (Δϕ = 0.43 eV), and shift of the Fermi level (ΔE F = 0.09 eV).

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

REFERENCES

  1. Eholie, R., Gorochov, O., Guittered, E., et al., Les composés de type PaGa2Se4: EuM2X4, SrM2X4 et PbM2X4 (avec M = Al, Ga et X = S, Se), Bull. Soc. Chim. Fr., 1971, no. 3, pp. 1747-1750.

  2. Roques Par, R., Rimet, R., Dectercq, I.P., and Germain, G., Détermination de la structure cristalline de EuGa2S4, Acta Crystallogr., Sect. B: Struct. Crystallogr. Cryst. Chem., 1979, vol. 35, pp. 555-557.

    Google Scholar 

  3. Tagiyev, O.B., Niftiyev, G.M., and Azizov, T.Kh., Dark-Current Relaxation in EuGa2S4 Single Crystals, Solid State Commun., 1982, vol. 44, no. 3, pp. 401-402.

    Google Scholar 

  4. Tagiev, O.B., Niftiev, G.M., and Askerov, I.M., The Frenkel Thermal-Field Emission in EuGa2S4 Single Crystals, Phys. Status Solidi A, 1983, vol. 78, pp. k43-k46.

    Google Scholar 

  5. Abdullaev, G.B., Tagiev, O.B., Niftiev, G.M., and Azizov, T.Kh., Injection and Thermoactivation Currents in EuGa2S3 Single Crystals, Phys. Status Solidi A, 1982, vol. 71, pp. k45-k48.

    Google Scholar 

  6. Lampert, M. and Mark, P., Injection Currents in Solids, New York: Academic, 1969, 2nd ed. Translated under the title Inzhektsionnye toki v tverdykh telakh, Moscow: Mir, p. 473

    Google Scholar 

  7. Gutmann, F. and Lyons, L.E., Organic Semiconductors, New York: Wiley, 1967. Translated under the title Organicheskie poluprovodniki, Moscow: Mir, 1970, p. 690.

    Google Scholar 

  8. Manfredotti, C., De Blasi, Galassini, S., et al., A Tepore Analysis of SCLC Curves by a New Direct Method, Phys. Status Solidi A, 1976, vol. 36, pp. 569-577.

    Google Scholar 

  9. Duisenbaev, M. and Mirsagatov, Sh.A., Space-Charge-Limited Currents in High-Resistivity Silicon Carbide Crystals, in Problemy dielektricheskoi elektroniki (Critical Issues in Dielectric Electronics), Tashkent: FAN, 1974, pp. 170-181.

    Google Scholar 

  10. Kolomiets, B.T. and Lebedev, I.I., SCLC Studies of Defect Centers in Glassy Arsenic Selenide, Fiz. Tekh. Poluprovodn. (Leningrad), 1967, vol. 1, no. 6, pp. 815-817.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Tagiev, O.B., Gasanova, S.E. & Talybova, D.A. Current–Voltage Characteristics of EuGa2S4<Co> Single Crystals. Inorganic Materials 38, 445–446 (2002). https://doi.org/10.1023/A:1015406602329

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1023/A:1015406602329

Keywords

Navigation