Abstract
The kinetics and mechanisms of InSb, GaAs, InAs, and InAs<Sn> dissolution in H2O2–HBr mixtures were studied. The dissolution rate was determined as a function of solution composition, and the rate-limiting steps were identified. The dissolution process was shown to be diffusion-limited for all the materials studied, independent of solution composition. The composition range was determined in which H2O2–HBr solutions can be used for chemical polishing of InAs. Doping was shown to have a strong effect on the dissolution rate.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
REFERENCES
Luft, B.D., Perevoshchikov, V.A., Vozmilova, L.N., et al., Fiziko-khimicheskie metody obrabotki poverkhnosti poluprovodnikov (Physicochemical Processing of Semiconductor Surfaces), Moscow: Radio i Svyaz', 1982.
Perevoshchikov, V.A., Dynamic Chemical Polishing of Semiconductor Surfaces, Vysokochist. Veshchestva, 1995, no. 2, pp. 5-29.
Vozmilova, L.I. and Berdichenko, M.M., Local Etching of GaAs and InP with Bromine Solution in Dimethylformamide, Izv. Akad. Nauk SSSR, Neorg. Mater., 1980, vol. 16, no. 1, pp. 13-17.
Adachi, S. and Kunishige, K., Chemical Etching Characteristics of (001) Gallium Arsenide (GaAs), J. Electrochem. Soc., 1983, vol. 130, no. 12, pp. 2427-2434.
Matsuoka, T. and Nagai, H., Indium Phosphide Etchant for Submicron Patterns, J. Electrochem. Soc., 1986, vol. 133, no. 12, pp. 2484-2491.
Notten, P.H.L. and Damen, A.A.J.M., The Electrochemistry of InP in Br2/HBr Solutions and Its Relevance to Etching Behaviour, Appl. Surf. Sci., 1987, vol. 28, pp. 331-344.
Chu, S.N.G., Jodlauk, C.M., and Ballman, A.A., New Dislocation Etchant for InP, J. Electrochem. Soc., 1982, vol. 129, no. 2, pp. 352-354.
Vengel', P.F., Tomashik, V.N., and Fomin, A.V., Dissolution of InSb in Br2-HBr-H2O Solutions, Neorg. Mater., 1996, vol. 32, no. 1, pp. 23-25 [Inorg. Mater. (Engl. Transl.), vol. 32, no. 1, pp. 16-16].
Tomashik, Z.F., Danylenko, S.G., and Tomashik, V.N., Dissolution of Indium Arsenide in Nitric Solutions of the Hydrobromic Acid, Semicond. Phys., Quantum Electron. Optoelectron., 1999, vol. 2, no. 1, pp. 80-83.
Tomashik, Z.F., Danylenko, S.G., and Tomashik, V.N., Dissolution of Indium Arsenide in the HNO3-HBr-H2O Solutions, Proc. SPIE-Int. Soc. Opt. Eng., 1999, vol. 3890, pp. 478-485.
Tomashik, V.N. and Sava, A.A., Reactions of Tellurium and Tellurium-Containing Semiconductors with Solutions of Hydrobromic Acid in Nitric Acid, Neorg. Mater., 1992, vol. 28, no. 2, pp. 324-328.
Sangwal, K., Etching of Crystals: Theory, Experiment, and Application, Amsterdam: Elsevier, 1987. Translated under the title Travlenie kristallov: Teoriya, eksperiment, primenenie, Moscow: Mir, 1990.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Tomashik, Z.F., Kusyak, N.V. & Tomashik, V.N. Chemical Etching of InAs, InSb, and GaAs in H2O2–HBr Solutions. Inorganic Materials 38, 434–437 (2002). https://doi.org/10.1023/A:1015402501421
Issue Date:
DOI: https://doi.org/10.1023/A:1015402501421