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Characterization of Oxides Formed on InP, InGaAs, InAlAs, and InGaAs/InAlAs Heterostructures at 300–500°C

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Abstract

The nature and composition of oxides formed on InP, InGaAs, InAlAs, and on InGaAs/InAlAs heterostructures, both in planar and lateral configurations, was studied at temperatures in the range 300–500°C. These materials were oxidized in either oxygen, or moist air [air passed through water at 25 or 95°C; so-called “moist air (25°C)” or “moist air (95°C)”], or in moist N2 (N2 passed through water at 95°C; so called “moist N2”) for times from 5 to 960 min. Under these conditions, oxide film thicknesses ranged from 5 Å to about 1 μm. The oxide films on InP were composed of In2O3, InPO3, and P4O10, with InPO3 being the predominant phase. The In2O3 content of the films varied with temperature, oxidation time, and oxidation conditions. For example, for InP in oxygen, the amount of this oxide decreased with temperature and time. At 450°C, the amount of In2O3 decreased markedly for oxidation in moist air (95°C) and even more so for oxidation in moist N2. Oxide films produced on InGaAs appeared to be composed mainly of a mixed oxide (Ga,In)2O3, with the In content being predominant. The oxide produced on InAlAs was composed mainly of In2O3 and Al2O3, with the amount of the latter tending to increase with increasing temperature. It was found that at 400 to 500°C, InAlAs did not oxidize much faster than InGaAs or InP in moist air (25°C) or in moist air (95°C). In moist N2, however, InAlAs was preferentially oxidized by a factor of five to ten over InP and InGaAs. In InAlAs/InGaAs heterostructures on InP substrates, used in heterojunction bipolar transitors (HBTs), InAlAs was even more strongly preferentially oxidized; the ratio of oxide thicknesses InP:InGaAs:InAlAs being 1:1:80. This is encouraging for forming Al2O3-containing oxide layers in device structures to try to improve device performance.

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Authors and Affiliations

  1. Institute for Microstrutural Sciences, NRC, Ottawa, Canada, K1A 0R6

    R. J. Hussey & G. I. Sproule

  2. Institute for National Measurement Standards, NRC, Ottawa, Canada, K1A 0R6

    J. P. McCaffrey

  3. Institute for Microstrutural Sciences, NRC, Ottawa, Canada, K1A 0R6

    M. J. Graham

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  1. R. J. Hussey
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  2. G. I. Sproule
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  3. J. P. McCaffrey
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  4. M. J. Graham
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Hussey, R.J., Sproule, G.I., McCaffrey, J.P. et al. Characterization of Oxides Formed on InP, InGaAs, InAlAs, and InGaAs/InAlAs Heterostructures at 300–500°C. Oxidation of Metals 57, 427–447 (2002). https://doi.org/10.1023/A:1015396204143

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