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Photoelectric Properties of Photodetectors Based on Silicon–Platinum Silicide Schottky Barriers with a Highly-Doped Surface Layer

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Abstract

We have calculated the spectral, threshold, and noise characteristics of p-Si–PtSi photodetectors with highly-doped surface layers produced by molecular-beam epitaxy and short-pulse ion implantation by a recoil method.

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Authors and Affiliations

  1. Siberian Physical-Technical Institute at Tomsk State University, Russia

    A. V. Voitsekhovskii, A. P. Kokhanenko, S. N. Nesmelov, S. I. Lyapunov & N. V. Komarov

Authors
  1. A. V. Voitsekhovskii
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  2. A. P. Kokhanenko
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  3. S. N. Nesmelov
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  4. S. I. Lyapunov
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  5. N. V. Komarov
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Voitsekhovskii, A.V., Kokhanenko, A.P., Nesmelov, S.N. et al. Photoelectric Properties of Photodetectors Based on Silicon–Platinum Silicide Schottky Barriers with a Highly-Doped Surface Layer. Russian Physics Journal 44, 1139–1151 (2001). https://doi.org/10.1023/A:1015393305423

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  • DOI: https://doi.org/10.1023/A:1015393305423

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