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Quasi-Relativism, the Narrow-Gap Property, and Forced Electron Dynamics in Solids

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Abstract

Narrow-gap semiconductors, used in quantum network engineering, are characterized by small effective electron masses on the Fermi level and hence by high electron mobility in the lattice. We construct an explicitly solvable model that clarifies one possible mechanism for small effective masses to appear. Another mathematical model constructed here describes a possible mechanism for using a traveling wave to control an alternating quantum current in a one-dimensional lattice.

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Authors and Affiliations

  1. Fock Institute of Physics, St. Petersburg State University, St. Petersburg, Russia

    B. S. Pavlov & A. A. Pokrovski

  2. Department of Mathematics, University of Auckland, Auckland, New Zealand

    B. S. Pavlov

  3. Department of Applied Mathematics, St. Petersburg State Academy of Aerospace Instrumentation, St. Petersburg, Russia

    A. V. Strepetov

Authors
  1. B. S. Pavlov
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  2. A. A. Pokrovski
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  3. A. V. Strepetov
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Pavlov, B.S., Pokrovski, A.A. & Strepetov, A.V. Quasi-Relativism, the Narrow-Gap Property, and Forced Electron Dynamics in Solids. Theoretical and Mathematical Physics 131, 506–515 (2002). https://doi.org/10.1023/A:1015153719438

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