Abstract
The steady-state photocurrent through Bi12TiO20 , Bi12GeO20 , and Bi12SiO20 crystals was measured as a function of temperature (77–300 K) and illumination. The four-level energy-band diagram inferred from the experimental data adequately describes the carrier generation, recombination, and photocurrent quenching processes in wide-gap sillenite semiconductors.
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Skorikov, V.M., Zakharov, I.S., Volkov, V.V. et al. Steady-State Photocurrent Characteristics in Sillenite Crystals. Inorganic Materials 38, 245–251 (2002). https://doi.org/10.1023/A:1014718732485
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DOI: https://doi.org/10.1023/A:1014718732485