Abstract
The introduction of oxidizers (O2 , N2O, N2O + O2 mixture) into the gas phase (argon) affects the growth rate, composition, and properties of the films prepared via thermal decomposition of indium acetylacetonate, In(acac)3 . N2O increases the average growth rate of the films by a factor of 3. It was proved by the radical fixation method that N2O oxidizes In(acac)3 molecules chemisorbed on the substrate, thus changing the composition and improving the electrical properties of the films.
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Mittov, O.N., Ponomareva, N.I. & Mittova, I.Y. Effect of Oxidizers on the Growth of Indium Oxide Films from Indium Acetylacetonate Vapor. Inorganic Materials 38, 203–206 (2002). https://doi.org/10.1023/A:1014702328850
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DOI: https://doi.org/10.1023/A:1014702328850