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Carrier compensation behaviors in Si-doped Al x Ga1−x As epilayers due to thermal annealing

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Quantum-functional Semiconductor Research Center and Department of Physics, Dongguk University, 3-26, Pildong, Chungku, Seoul, 100-715, Korea

    H. G. Lee

  2. Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul, 139-701, Korea

    T. W. Kim

Authors
  1. H. G. Lee
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  2. T. W. Kang
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  3. T. W. Kim
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Lee, H.G., Kang, T.W. & Kim, T.W. Carrier compensation behaviors in Si-doped Al x Ga1−x As epilayers due to thermal annealing. Journal of Materials Science Letters 21, 49–51 (2002). https://doi.org/10.1023/A:1014290527676

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  • DOI: https://doi.org/10.1023/A:1014290527676

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